Product Summary
The SPP02N60C3 is a Cool MOS Power Transistor.
Parametrics
SPP02N60C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 1.8A; TC = 100℃, ID: 1.1A; (2)Pulsed drain current, tp limited by Tjmas, IDpuls: 5.4A; (3)Avalanche energy, single pulse, ID = 1.35A, VDD = 50V, EAS: 50mJ; (4)Avalanche energy, repetitive tAR limited by Tjmas, ID = 1.8A, VDD = 50V, EAR: 0.07mJ; (5)Avalanche current, repetitive tAR limited by Tjmas, IAR: 1.8A; (6)Gate source voltage static, VGS: ±20V; (7)Gate source voltage AC(f > 1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 25W; (9)Operating and storage temperature, TJj, Tstg: -55 to +150℃; (10)Reverse diode dv/dt, dv/dt: 15V/ns.
Features
SPP02N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Pb-free lead plating; RoHS compliant; (7)Qualified according to JEDEC for target applications.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPP02N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 1.8A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SPP02N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 1.8A |
Data Sheet |
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SPP03N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 3.2A |
Data Sheet |
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SPP04N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 4.5A |
Data Sheet |
Negotiable |
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SPP07N60C2 |
Other |
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Negotiable |
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