V40100C-E3/4W

V40100C-E3/4W, Trench MOS barrier Schottky Rectifier, TO-220-3, 100V, 40A, Vishay Siliconix

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PartNumber:: V40100C-E3/4W

Brand:: Vishay Siliconix - Vishay | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Part Number:V40100C-E3/4W
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Product Summary

The V40100C-E3/4W is a Dual High-Voltage Trench MOS barrier Schottky Rectifier. The applications of the V40100C-E3/4W include high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Parametrics

V40100C-E3/4W absolute maximum ratings: (1)Maximum repetitive peak reverse voltage, VRRM: 100 V; (2)Maximum average forward rectified current, per device, IF(AV): 40A; per diode, IF(AV): 20A; (3)Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode, IFSM: 250 A; (4)Non-repetitive avalanche energy at TJ = 25℃, L = 90 mH per diode, EAS: 230 mJ; (5)Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38℃ ± 2℃ per diode, IRRM: 1.0 A; (6)Voltage rate of change (rated VR), dV/dt: 10 000 V/μs; (7)Operating junction and storage temperature range, TJ, TSTG: -40 to + 150℃.

Features

V40100C-E3/4W features: (1)trench mos schottky technology; (2)low forward voltage drop, low power losses; (3)high efficiency operation; (4)low thermal resistance; (5)meets msl level 1, per j-std-020, lf maximum peak of 245℃ (for to-263ab package); (6)solder bath temperature 275℃ maximum, 10 s, per jesd; (7)22-b106 (for to-220ab, to-263ab and to-262aa package); (8)compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec.