Product Summary

The STTH8S06FP is a state of the art ultrafast recovery diode. By the use of 600 V Pt doping planar technology, this diode will out-perform the power factor corrections circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH8S06FP, reduces significantly the switching power losses of the MOSFET and thus increases the efficiency of the application. This leads designers to reduce the size of their heatsinks. The STTH8S06FP is also intended for applications in power supplies and power conversions systems, motor drive, and other power switching applications.

Parametrics

STTH8S06FP absolute maximum ratings: (1)Repetitive peak reverse voltage, VRRM: 600 V; (2)Average forward current, IF(AV): 8 A; (3)Surge non repetitive forward current tp = 10 ms, IFSM: 60 A; (4)Storage temperature range, Tstg: -65 to +175℃; (5)Maximum operating junction temperature, Tj: 175℃.

Features

STTH8S06FP features: (1)Ultrafast recovery; (2)Low reverse recovery current; (3)Reduces losses in diode and switching transistor; (4)Low thermal resistance; (5)Higher frequency operation; (6)Insulated TO-220FPAC version: Insulation voltage = 1500 V rms; Package capacitance = 12 pF.

Diagrams

STTH8S06FP block diagram

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