Product Summary

The STP65NF06 is an N-channel STripFET II power MOSFET. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The STP65NF06 shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The application of the STP65NF06 includes switching applications.

Parametrics

STP65NF06 absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 60 V; (2)Gate-source voltage, VGS: ±20 V; (3)Drain current (continuous) at TC = 25℃, ID: 60A; (4)Drain current (continuous) at TC = 100℃, ID: 42A; (5)Drain current (pulsed), IDM: 240A; (6)Total dissipation at TC = 25℃, PTOT: 110W; (7)Derating factor: 0.73 W/℃; (8)Peak diode recovery voltage slope, dv/dt: 10 V/ns; (9)Single pulse avalanche energy, EAS: 390mJ; (10)Storage temperature, Tstg: -55 to +175℃; (11)Max. operating junction temperature, Tj: -55 to +175℃.

Features

STP65NF06 features: (1)Standard level gate drive; (2)100% avalanche tested.

Diagrams

STP65NF06 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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