(Hong Kong)
Product Summary
The STP4NK60ZFP is an N-channel SuperMESH power MOSFET. The STP4NK60ZFP is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The device complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The application of the STP4NK60ZFP includes switching applications.
Parametrics
STP4NK60ZFP absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 600 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 4A; (4)Drain current (continuous) at TC = 100℃, ID: 2.5A; (5)Drain current (pulsed), IDM: 16A; (6)Total dissipation at TC = 25℃, PTOT: 25W; (7)Derating factor: 0.2 W/℃; (8)Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ), VESD(G-S): 3000V; (9)Peak diode recovery voltage slope, dv/dt: 4.5 V/ns; (10)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (11)Storage temperature, Tstg: -65 to 150℃; (12)Max. operating junction temperature, Tj: 150℃.
Features
STP4NK60ZFP features: (1)100% avalanche tested; (2)Very low intrinsic capacitances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STP4NK60ZFP |
STMicroelectronics |
MOSFET PowerMESH Zener SuperMESH |
Data Sheet |
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