(Hong Kong)
Product Summary
The STF13NK50Z is an N-channel SuperMESH Power MOSFET. The STF13NK50Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STF13NK50Z complements ST full range of high voltage MOSFETs. The application of the STF13NK50Z includes switching application.
Parametrics
STF13NM60N absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 500 V; (2)Gate-source voltage, VGS: ±25 V; (3)Drain current (continuous) at TC = 25℃, ID: 12A; (4)Drain current (continuous) at TC = 100℃, ID: 6A; (5)Drain current (pulsed), IDM: 48A; (6)Total dissipation at TC = 25℃, PTOT: 25W; (7)Peak diode recovery voltage slope, dv/dt: 15V/ns; (8)Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25℃), VISO: 2500 V; (9)Storage temperature, Tstg: -55 to 150℃; (10)Max. operating junction temperature, Tj: 150℃.
Features
STF13NM60N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STF13NM60N |
STMicroelectronics |
MOSFET N-CH 600V 11A MDMESH Power MDmesh |
Data Sheet |
|
|
||||||||||||
|
STF13NM60N-H |
STMicroelectronics |
MOSFET POWER MOSFET N-CH 600V |
Data Sheet |
|
|
||||||||||||
