Product Summary

The STF10NM60N is an N-channel MDmesh II Power MOSFET. This device implements the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. The STF10NM60N is therefore suitable for the most demanding high efficiency converters. The application of the STF10NM60N includes switching applications.

Parametrics

STF10NM60N absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 650 V; (2)Gate-source voltage, VGS: ±25 V; (3)Drain current (continuous) at TC = 25℃, ID: 9A; (4)Drain current (continuous) at TC = 100℃, ID: 5.7A; (5)Drain current (pulsed), IDM: 36A; (6)Total dissipation at TC = 25℃, PTOT: 25 W; (7)Peak diode recovery voltage slope, dv/dt: 15 V/ns; (8)Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25℃), VISO: 2500 V; (9)Storage temperature, Tstg: -55 to 150℃; (10)Max. operating junction temperature, Tj: 150℃.

Features

STF10NM60N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.

Diagrams

STF10NM60N circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STF10NM60N
STF10NM60N

STMicroelectronics

MOSFET N-channel 600 V Mdmesh 8A

Data Sheet

0-650: $0.88
650-1000: $0.77
1000-2000: $0.73
2000-5000: $0.71
STF10NM60ND
STF10NM60ND

STMicroelectronics

MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

Data Sheet

0-1: $1.79
1-10: $1.48
10-100: $1.28
100-250: $1.13