Product Summary

The SPW12N50C3 is a cool MOS power transistor.

Parametrics

SPW12N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11.6A; TC = 100℃, ID: 7A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 34.8A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 340mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 0.6mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11.6A; (6)Reverse diode dv/dt, IS = 11.6A, VDS = 480V, Tj = 125℃, dv/dt: 6 V/ns; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 125W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.

Features

SPW12N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.

Diagrams

SPW12N50C3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPW12N50C3
SPW12N50C3
Infineon Technologies
MOSFET COOL MOS N-CH 560V 11.6A
Data Sheet
0-1: $1.97
1-10: $1.77
10-100: $1.21
100-500: $1.10
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPW11N60C2
SPW11N60C2
Other

Data Sheet
Negotiable 
SPW11N60C3
SPW11N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
0-1: $2.02
1-10: $1.61
10-100: $1.48
100-250: $1.19
SPW11N60CFD
SPW11N60CFD
Infineon Technologies
MOSFET COOL MOS N-CH 650V 11A
Data Sheet
0-1: $2.35
1-25: $1.89
25-100: $1.72
100-250: $1.55
SPW11N60S5
SPW11N60S5
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
0-1: $2.45
1-10: $2.18
10-100: $1.79
100-500: $1.45
SPW11N80C3
SPW11N80C3
Infineon Technologies
MOSFET COOL MOS N-CH 800V 11A
Data Sheet
0-1: $2.41
1-10: $1.93
10-100: $1.76
100-250: $1.42
SPW12N50C3
SPW12N50C3
Infineon Technologies
MOSFET COOL MOS N-CH 560V 11.6A
Data Sheet
0-1: $1.97
1-10: $1.77
10-100: $1.21
100-500: $1.10