Product Summary
The SPP24N60C3 is a cool MOS power transistor.
Parametrics
SPP24N60C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 24.3A; TC = 100℃, ID: 15.4A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 72.9A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 780mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 1mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 24.3A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 240W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SPP24N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)Ultra low effective capacitances; (7)Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPP24N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 24.3A |
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