(Hong Kong)
Product Summary
The SPP11N80C3 is a cool MOS power transistor.
Parametrics
SPP11N80C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11A; TC = 100℃, ID: 7.1A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 33A; (3)Avalanche energy, single pulse, ID = 8, VDD = 50V, EAS: 470mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 16A, VDD = 50V, EAR: 0.2mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 156 W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SPP11N80C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)PG-TO-220-3-31: Fully isolated package (2500 VAC; 1minute); (8)Pb-free lead plating; RoHS compliant; (9)Qualified according to JEDEC for target applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SPP11N80C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 800V 11A |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SPP100N03S203 |
|
MOSFET N-CH 30V 100A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPP100N03S2-03 |
|
MOSFET N-CH 30V 100A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPP100N03S2L03 |
|
MOSFET N-CH 30V 100A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPP100N03S2L-03 |
|
MOSFET N-CH 30V 100A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPP100N04S2-04 |
|
MOSFET N-CH 40V 100A TO-220 |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPP100N04S2L-03 |
|
MOSFET N-CH 40V 100A TO-220 |
Data Sheet |
Negotiable |
|
||||||||||||
