(Hong Kong)
Product Summary
The SPB18P06PG is a SIPMOS power-transistor.
Parametrics
SPB18P06PG absolute maximum ratings: (1)Continuous drain current, TA = 25℃, ID: -18.7A; TA = 25℃, ID: -13.2A; (2)Pulsed drain current, TA = 25℃, ID, pulse: -74.8A; (3)Avalanche energy, single pulsem, ID = 18.7A, RGS = 25Ω, EAS: 151mJ; (4)Avalanche energy, periodic limited by Tjmax, EAR: 8mJ; (5)Reverse diode dv /dt, dv /dt: -6 kV/μs; (6)Gate source voltage, VGS: ±20 V; (7)Power dissipation, TA = 25℃, Ptot: 81.1W; (8)Operating and storage temperature, Tj, Tstg: -55 to +175℃; (9)Soldering temperature: 260℃.
Features
SPB18P06PG features: (1)P-Channel; (2)Enhancement mode; (3)Avalanche rated; (4)dv /dt rated; (5)175℃ operating temperature; (6)Pb-free lead plating; RoHS compliant.
Diagrams
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 SPB1 |
Hammond Manufacturing |
Enclosures, Boxes, & Cases SWING PANEL BRACKET |
Data Sheet |
Negotiable |
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SPB10015 |
Other |
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Negotiable |
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SPB10035 |
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Data Sheet |
Negotiable |
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SPB10045 |
Microsemi |
DIODE SCHOTTKY 200A 45V SOT227 |
Data Sheet |
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SPB10045E3 |
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DIODE SCHOTTKY 45V 100A SOT-227 |
Data Sheet |
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SPB100N03S2-03 |
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MOSFET N-CH 30V 100A D2PAK |
Data Sheet |
Negotiable |
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