Product Summary

The SPA11N60C3 is a cool MOS power transistor.

Parametrics

SPA11N60C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11A; TC = 100℃, ID: 7A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 33A; (3)Avalanche energy, single pulse, ID = 5.5A, VDD = 50V, EAS: 340mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 11A, VDD = 50V, EAR: 0.6mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 33W; (9) Operating and storage temperature, Tj , Tstg: -55 to +150℃.

Features

SPA11N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

SPA11N60C3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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SPA11N60C3
SPA11N60C3

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Data Sheet

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10-100: $1.40
100-500: $0.78
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Data Sheet

0-1: $2.50
1-25: $2.42
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