(Hong Kong)
Product Summary
The SIHP18N50C-E3 is a power MOSFET.
Parametrics
SIHP18N50C-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 500V; (2)Gate-Source Voltage, VGS: ±30V; (3)Continuous Drain Current (TJ = 150℃), VGS at 10 V, TC = 25℃, ID: 18A; TC = 100℃, ID: 11 A; (4)Pulsed Drain Current, IDM: 72A; (5)Linear Derating Factor, TO-220AB: 1.8 W/℃; (6)Single Pulse Avalanche Energy, EAS: 361 mJ; (7)Maximum Power Dissipation, TO-220AB, PD: 223 W; (8)Peak Diode Recovery dV/dtd, dV/dt: 5 V/ns; (9)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 150℃; (10)Soldering Recommendations (Peak Temperature), for 10s: 300℃.
Features
SIHP18N50C-E3 features: (1)Low Figure-of-Merit Ron x Qg; (2)100 % Avalanche Tested; (3)High Peak Current Capability; (4)dV/dt Ruggedness; (5)Improved trr/Qrr; (6)Improved Gate Charge; (7)High Power Dissipations Capability; (8)Compliant to RoHS Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SIHP18N50C-E3 |
Vishay/Siliconix |
MOSFET 560V 18A 223W 270mohm @ 10V |
Data Sheet |
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SIHP18N50C-E3 |
Vishay/Siliconix |
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Data Sheet |
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