Product Summary

The MJE243G is a complementary silicon power plastic transistor. The MJE243G is designed for low power audio amplifier and low-current, high-speed switching applications.

Parametrics

MJE243G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 100 Vdc; (2)Collector-Base Voltage, VCB: 100 Vdc; (3)Emitter-Base Voltage, VEB: 7.0 Vdc; (4)Collector Current - Continuous, IC: 4.0Adc; -Peak, IC: 8.0Adc; (5)Base Current, IB: 10 Adc; (6)Total Power Dissipation @ TC = 25℃, PD: 15 W; Derate above 25℃, PD: 120 mW/℃; (7)Total Power Dissipation @ TA = 25℃, PD: 1.5 W; Derate above 25℃, PD: 12 mW/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃.

Features

MJE243G features: (1)High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min); (2)High DC Current Gain @ IC = 200 mAdc hFE = 40-200; = 40-120; (3)Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; (4)High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; (5)Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; (6)Pb-Free Packages are Available.

Diagrams

MJE243G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJE243G
MJE243G

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Data Sheet

0-1: $0.32
1-25: $0.29
25-100: $0.22
100-500: $0.18
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJE200
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Data Sheet

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MJE200G

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Data Sheet

0-1: $0.32
1-25: $0.25
25-100: $0.21
100-500: $0.18
MJE200STU
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Data Sheet

0-1: $0.16
1-25: $0.14
25-100: $0.12
100-250: $0.09
MJE200TSTU
MJE200TSTU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Epitaxial Short Leads

Data Sheet

0-1: $0.24
1-25: $0.21
25-100: $0.19
100-250: $0.14
MJE210
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Data Sheet

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MJE210G

ON Semiconductor

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Data Sheet

0-1: $0.29
1-25: $0.25
25-100: $0.18
100-500: $0.15