Product Summary

The M27W256B-80F6 is a low voltage 256 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits. The M27W256B-80F6 operates in the read mode with a supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27W256B-80F6 is offered in PDIP28, PLCC32 and TSOP28 (8 x 13.4 mm) packages.

Parametrics

M27W256B-80F6 absolute maximum ratings: (1)Ambient Operating Temperature, TA: -40 to 125℃; (2)Temperature Under Bias, TBIAS: -50 to 125℃; (3)Storage Temperature, TSTG: -65 to 150℃; (4)Input or Output Voltage, VIO: -2 to 7 V; (5)Supply Voltage, VCC: -2 to 7 V; (6)A9 Voltage, VA9: -2 to 13.5 V; (7)Program Supply Voltage, VPP: -2 to 14 V.

Features

M27W256B-80F6 features: (1)2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION; (2)ACCESS TIME: 70ns atVCC = 3.0V to 3.6V; 80ns atVCC = 2.7V to 3.6V; (3)PIN COMPATIBLE with M27C256B; (4)LOW POWER CONSUMPTION: 15mA max Standby Current; 15mA max Active Current at 5MHz; (5)PROGRAMMING TIME 100ms/byte; (6)HIGH RELIABILITY CMOS TECHNOLOGY: 2,000V ESD Protection; 200mA Latchup Protection Immunity; (7)ELECTRONIC SIGNATURE, Manufacturer Code: 20h; Device Code: 3Dh.

Diagrams

M27W256B-80F6 block diagram

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