(Hong Kong)
Product Summary
The IRGPS40B120UDP is an insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
IRGPS40B120UDP absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 1200 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 80A; (3)Continuous Collector Current, @ TC = 100℃, IC: 40A; (4)Pulsed Collector Current, ICM: 160A; (5)Clamped Inductive Load Current, ILM: 160A; (6)Diode Continuous Forward Current, @ TC = 25℃, IF: 80A; (7)Diode Continuous Forward Current, @ TC = 100℃, IF: 40A; (8)Diode Maximum Forward Current, IFM: 160A; (9)Gate-to-Emitter Voltage, VGE: ±20 V; (10)Maximum Power Dissipation, @ TC = 25℃, PD: 595W; (11)Maximum Power Dissipation, @ TC = 100℃, PD: 238W; (12)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (13)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case).
Features
IRGPS40B120UDP features: (1)Non Punch Through IGBT Technology; (2)Low Diode VF; (3)10μs Short Circuit Capability; (4)Square RBSOA; (5)Ultrasoft Diode Reverse Recovery Characteristics; (6)Positive VCE (on) Temperature Coefficient; (7)Super-247 Package; (8)Lead-Free.
Diagrams
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 IRGPS40B120UDP |
International Rectifier |
IGBT Transistors 1200V UltraFast 5-40kHz |
Data Sheet |
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