(Hong Kong)
Product Summary
The IRG4BC40UPBF is an insulated gate bipolar transistor.
Parametrics
IRG4BC40UPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 600 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 40A; (3)Continuous Collector Current, @ TC = 100℃, IC: 20A; (4)Pulsed Collector Current, ICM: 160 A; (5)Clamped Inductive Load Current, ILM: 160A; (6)Gate-to-Emitter Voltage, VGE: ±20 V; (7)Reverse voltage avalanche energy, EARV: 15mJ; (8)Maximum Power Dissipation, @ TC = 25℃, PD: 160W; (9)Maximum Power Dissipation, @ TC = 100℃, PD: 65W; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case); (12)Mounting torque, 6-32 or M3 screw: 10lbf·in(1.1N·m).
Features
IRG4BC40UPBF features: (1)Ultrafast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3; (3)Industry standard TO-220AB package; (4)Lead-free.
Diagrams
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 IRG4BC40UPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
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Data Sheet |
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Data Sheet |
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