(Hong Kong)
Product Summary
The IRFR5305TRPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR5305TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFR5305TRPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ -10V: -31A; (2)Continuous Drain Current, VGS @ -10V: -22A; (3)Pulsed Drain Current: -110A; (4)Power Dissipation: 110W; (5)Linear Derating Factor: 0.71W/℃; (6)Gate-to-Source Voltage: ±20V; (7)Single Pulse Avalanche Energy: 280mJ; (8)Avalanche Current: -16A; (9)Repetitive Avalanche Energy: 11mJ; (10)Peak Diode Recovery dv/dt: -5.0V/ns; (11)Operating Junction and Storage Temperature Range: -55℃ to +175℃; (12)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case).
Features
IRFR5305TRPBF features: (1)Ultra Low On-Resistance; (2)Surface Mount; (3)Straight Lead; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
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 IRFR5305TRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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