(Hong Kong)
Product Summary
The IRFR430ATRPBF is a Power MOSFET. The applications of the IRFR430ATRPBF include Switch Mode Power Supply (SMPS), Uninterruptible Power Supply, High Speed Power Switching.
Parametrics
IRFR430ATRPBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: 500V; (2)Gate-Source Voltage, VGS: ± 30V; (3)Continuous Drain Current VGS at 10 V, TC = 25℃, ID: 5A; TC = 100℃, ID: 3.2 A; (4)Pulsed Drain Currenta, IDM: 20A; (5)Linear Derating Factor: 0.91 W/℃; (6)Single Pulse Avalanche Energy, EAS: 130 mJ; (7)Repetitive Avalanche Currenta, IAR: 5.0 A; (8)Repetitive Avalanche Energya, EAR: 11 mJ; (9)Maximum Power Dissipation TC = 25℃, PD: 110 W; (10)Peak Diode Recovery dV/dtc, dV/dt: 3.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 150℃; (12)Soldering Recommendations (Peak Temperature), for 10s: 300℃.
Features
IRFR430ATRPBF features: (1)Low Gate Charge Qg Results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Effective Coss Specified; (5)Lead (Pb)-free Available.
Diagrams
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 IRFR430ATRPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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