(Hong Kong)
Product Summary
The IRFP4768PBF is a HEXFET Power MOSFET. The applications of the IRFP4768PBF include high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Parametrics
IRFP4768PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 93A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 66A; (3)Pulsed Drain Current, IDM: 370A; (4)PD @TC = 25℃ Maximum Power Dissipation W; (5)Linear Derating FactorL: 3.4 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery, dv/dt: 24 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (9)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lbfin (1.1Nm).
Features
IRFP4768PBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRFP4768PBF |
International Rectifier |
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg |
Data Sheet |
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