IRFP460LCPBF

IRFP460LCPBF, HEXFET Power MOSFET, TO-247AC, 500V, 20 Amp, International Rectifier

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PartNumber:: IRFP460LCPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRFP460LCPBF is a HEXFET power MOSFET. The IRFP460LCPBF achieves significantly lower gate charge over conventional MOSFFET. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of the IRFP460LCPBF offers the designer a new standard in power transisitors for switching applications. The TO-247 package is referred for commercial-industrial applications where higher power levels preclude the use of TO-220 device. The TO 247 is similar but supprior to the earlier TO-218 package because of its isolated mounting hole.

Parametrics

IRFP460LCPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 20A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 12A; (3)Pulsed Drain Current, IDM: 80A; (4)PD @TC = 25℃, Power Dissipation: 280W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±30 V; (7)Single Pulse Avalanche Energy, EAS: 960mJ; (8)Avalanche Current, IAR: 20 A; (9)Repetitive Avalanche Energy, EAR: 28 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 3.5V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP460LCPBF features: (1)Ultra low gate charge; (2)Reduced Gated Drive Requirement; (3)Enhanced 30V Vgs rating; (4)Reduced Ciss, Coss, Crss; (5)Isolated central mounting hole; (6)Dynamic dV/dt Rating; (7)Repetitive Avalanche Rated; (8)Lead free.