Product Summary

The IRFP360PBF is a Third generation Power MOSFET from International Rectifier. The IRFP360PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 device. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP360PBF also provides greater creepage distance between pins to meets the requirements of most safety specifications.

Parametrics

IRFP360PBF absolute maxing ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 23A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 14A; (3)Pulsed Drain Current, IDM: 92A; (4)PD @TC = 25℃, Power Dissipation: 280W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 1200mJ; (8)Avalanche Current, IAR: 23 A; (9)Repetitive Avalanche Energy, EAR: 28 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 4.0V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP360PBF features: (1)Isolated Central Mounting Hole; (2)Dynamic dv/dt Rating; (3)Lead-Free; (4)Fast Switching; (5)Repetitive Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead free.

Diagrams

IRFP360PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFP360PBF
IRFP360PBF

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100-250: $1.50
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