Product Summary

The IRFP350PBF is a Third generation Power MOSFET from International Rectifier. The IRFP350PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 device. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP350PBF also provides greater creepage distance between pins to meets the requirements of most safety specifications.

Parametrics

IRFP350PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 16 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 10 A; (3)Pulsed Drain Current, IDM: 64A; (4)PD @TC = 25℃, Power Dissipation: 190 W; (5)Linear Derating Factor: 1.5 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 390 mJ; (8)Avalanche Current, IAR: 16 A; (9)Repetitive Avalanche Energy, EAR: 19 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 4.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP350PBF features: (1)Dynamic dv/dt Rating; (2)Repetitive Avalanche Rated; (3)Isolated central mounting hole; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead-Free.

Diagrams

IRFP350PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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IRFP350PBF

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Data Sheet

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100-250: $1.13
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