Product Summary
The IRFP2907PBF is a automotive MOSFET. Specifically designed for Automotive applications, this Stripe Planar design of the IRFP2907PB utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFP2907PB are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRFP2907PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 209A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 148A; (3)Pulsed Drain Current, IDM: 840A; (4)PD @TC = 25℃, Power Dissipation: 470W; (5)Linear Derating Factor: 3.1 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 1970mJ; (8)Avalanche Current, IAR: 20 A; (9)Repetitive Avalanche Energy, EAR: 28 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175 ℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRFP2907PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFP2907PBF |
International Rectifier |
MOSFET |
Data Sheet |
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