IRF830PBF

IRF830PBF, HEXFET Power MOSFET, TO-220AB, 500V, 4.5 Amp, International Rectifier

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Price:: US $0.50~3.50 / piece [Get Latest Price]

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PartNumber:: IRF830PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

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Products Upload time: 2012-07-30

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Product Summary

The IRF830PBF is a Third generation Power MOSFET from Vishay. The IRF830PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF830PBF contribute to its wide acceptance throughout the industry.

Parametrics

IRF830PBF absolute maximum ratings: (1)ID @ Tc = 25℃ Continuous Drain Current, Vqs @ 10V: 4.5 A; (2)ID @ Tc = 100℃ Continuous Drain Current, Vqs @ 10V: 2.9 A; (3)Pulsed Drain Current, Idm: 18 A; (4)PD @ TC = 25℃ Power Dissipation: 74 W; (5)Linear Derating Factor: 0.59 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 280 mJ; (8)Avalanche Gurrent, UR: 4.5 A; (9)Repetitive Avalanche Energy, EAR: 7.4 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range, Tj, TSTG: -55 to + 150℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf-in (1.1 N-m).

Features

IRF830PBF features: (1)Dynamic dv/dt rating; (2)Repetitive avalanche rated; (3)Fast switching; (4)Ease of paralleling; (5)Simple drive requirements; (6)Lead-free.