Product Summary

The IRF640PBF is a Third generation Power MOSFET from Vishay. The IRF640PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF640PBF contribute to its wide acceptance throughout the industry.

Parametrics

IRF640PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: 200V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at 10V, TC=25℃, ID: 18A; (4)Continuous Drain Current, VGS at 10V, TC = 100℃, ID: 11A; (5)Pulsed Drain Currenta, IDM: 72A; (6)Linear Derating Factor: 1.0 W/℃; (7)Single Pulse Avalanche Energy, EAS: 580mJ; (8)Repetitive Avalanche Current, IAR: 18A; (9)Repetitive Avalanche Energy, EAR: 13 mJ; (10)Maximum Power Dissipation, TC = 25 ℃, PD: 125 W; (11)Peak Diode Recovery, dV/dt: 5.0V/ns; (12)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (13)Mounting Torque, 6-32 or M3 screw: 10 lbf·in(1.1N·m).

Features

IRF640PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.

Diagrams

IRF640PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF640PBF
IRF640PBF

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Data Sheet

0-1: $1.22
1-10: $1.18
10-100: $1.10
100-250: $1.00
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Quantity
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Data Sheet

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730-1000: $0.87
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