Product Summary

The IPW60R165CP is a CoolMOS Power Transistor. The applications of the IPW60R165CP include Hard switching topologies, for Server and Telecom.

Parametrics

IPW60R165CP absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 21A; TC = 100℃, ID: 13A ; (2)Pulsed drain current, pulse TC = 25℃, ID: 61A; (3)Avalanche energy, single pulse, ID = 7.9A, VDD = 50V, EAS: 522mJ; (4)Avalanche energy, repetitive, tAR, ID = 7.9A, VDD = 50V, EAR: 0.79mJ ; (5)Avalanche current, repetitive tAR, IAR: 7.9A; (6)MOSFET dv /dt ruggedness, VDS = 0 to 480 V, dv/dt: 50V/ns; (7)Gate source voltage, static, VGS: ±20V; AC (f >1 Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 192W; (9)Operating and storage temperature, Tj, Tstg: -55 to +150℃; (10)Mounting torque, M3 and M3.5 screws: 60 Ncm.

Features

IPW60R165CP features: (1)Lowest figure-of-merit RONxQg; (2)Ultra low gate charge; (3)Extreme dv/dt rated; (4)High peak current capability; (5)Qualified according to JEDEC for target applications; (6)Pb-free lead plating; RoHS compliant.

Diagrams

IPW60R165CP circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPW60R165CP
IPW60R165CP
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Data Sheet
0-1: $2.69
1-10: $2.49
10-100: $2.17
100-250: $1.87
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(USD)		 Quantity
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Data Sheet
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100-250: $4.61
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0-130: $3.67
130-250: $3.37
250-500: $3.07
500-1000: $2.68