Product Summary

The IPP60R190C6 is a Metal Oxide Semiconductor Field Effect Transistor for high voltage power MOSFET, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The IPP60R190C6 provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. The applications of the IPP60R190C6 include PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC silverbox, Adapter, LCD & PDP TV, Lighting, server, telecom, UPS and solar.

Parametrics

IPP60R190C6 absolute maximum ratings: (1)Continuous drain current, ID: 12.8 to 20.2A; (2)Pulsed drain current, ID, pulse: 59 A; (3)Avalanche energy, single pulse, EAS: 418 mJ; (4)Avalanche energy, repetitive, EAR: 0.63mJ; (5)Avalanche current, repetitive, IAR: 3.4A; (6)MOSFET dv/dt ruggedness, dv/dt: 50V/ns; (7)Gate source voltage, VGS: -20 to 20V; (8)Power dissipation, Ptot: 151W; (9)Mounting torque: 60 Ncm; (10)Continuous diode forward current, IS: 9.2 A; (11)Diode pulse current, IS,pulse: 30 A; (12)Reverse diode dv/dt, dv/dt: 15V/ns; (13)Maximum diode commutation, dif/dt: 500 A/μs.

Features

IPP60R190C6 features: features: (1)Extremely low losses due to very low FOM RdsonQg and Eoss; (2)Very high commutation ruggedness; (3)Easy to use/drive; (4)JEDEC qualified, Pb-free plating, Halogen free.

Diagrams

IPP60R190C6 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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IPP60R190C6
IPP60R190C6

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Data Sheet

0-245: $1.55
245-250: $1.40
250-500: $1.26
500-1000: $1.06
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Infineon Technologies

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Data Sheet

0-245: $1.55
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