Product Summary

The IPP037N08N3G is a OptiMOS3 Power-Transistor.

Parametrics

IPP037N08N3G absolute maximum ratings: (1)Continuous drain current, Tc = 25℃, ID: 100A; Tc = 100℃, ID: 100A; (2)Pulsed drain current, Tc = 25℃, ID,pulse: 400A; (3)Avalanche energy, single pulse, Id = 35 A, Rgs = 25Ω, EAS: 510mJ; (4)Gate source voltage, VGS: ±20V; (5)Power dissipation, TC = 25℃, Ptot: 214W; (6)Operating and storage temperature, TJ, Tstg: -55 to +175℃.

Features

IPP037N08N3G features: (1)Ideal for high frequency switching and sync. rec; (2)Optimized technology for DC/DC converters; (3)Excellent gate charge xRDS(on) product (FOM); (4)Very low on-resistance RDs(on); (5)N-channel, normal level; (6)100% avalanche tested; (7)Pb-free plating; RoHS compliant; (8)Qualified according to JEDEC for target applications; (9)Halogen-free according to IEC61249-2-21.

Diagrams

IPP037N08N3G circuit diagram

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(USD)		 Quantity
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