Product Summary

The IPP015N04NG is a OptiMOS3 Power-Transistor.

Parametrics

IPP015N04NG absolute maximum ratings: (1)Continuous drain current, VGS = 10V, TC = 25℃, ID: 120 A; VGS = 10V, TC = 100℃, ID: 120A; (2)Pulsed drain current, TC = 25℃, ID, pulse: 400A; (3)Avalanche current, single pulse, TC = 25℃, IAS: 100A; (4)Avalanche energy, single pulse, ID = 100A, RGS = 25Ω, EAS: 865 mJ; (5)Gate source voltage, VGS: ±20V.

Features

IPP015N04NG features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for DC/DC converters; (3)Qualified according to JEDEC1) for target applications; (4)N-channel, normal level; (5)Excellent gate charge xRDS(on) product (FOM); (6)Very low on-resistance RDS(on); (7)100% Avalanche tested; (8)Pb-free plating; RoHS compliant; (9)Halogen-free according to IEC61249-2-21.

Diagrams

IPP015N04NG circuit diagram

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IPP015N04N G
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