Product Summary

The FDPF18N50 is an N-Channel enhancement mode power field effect transistor. The FDPF18N50 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDPF18N50 is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

FDPF18N50 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 500 V; (2)Drain Current - Continuous (TC = 25℃), ID: 8A; Continuous (TC = 100℃), ID: 10·8A; (3)Drain Current - Pulsed, IDM: 72A; (4)Gate-Source voltage, VGSS: ±30 V; (5)Single Pulsed Avalanche Energy, EAS: 945 mJ; (6)Avalanche Current, IAR: 18 A; (7)Repetitive Avalanche Energy, EAR: 23 mJ; (8)Peak Diode Recovery dv/dt, dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃), PD: 58W; Derate above 25℃, PD: 0.47W/℃; (10)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds, TL: 300℃.

Features

FDPF18N50 features: (1)18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V; (2)Low gate charge ( typical 45 nC); (3)Low Crss ( typical 25 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FDPF18N50 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDPF18N50
FDPF18N50
Fairchild Semiconductor
MOSFET 500V N-CH MOSFET
Data Sheet
0-1: $1.33
1-25: $1.18
25-100: $1.07
100-250: $0.95
FDPF18N50T
FDPF18N50T
Fairchild Semiconductor
MOSFET 500V N-Channel PowerTrench MOSFET
Data Sheet
0-1: $1.39
1-25: $1.24
25-100: $1.12
100-250: $0.99