Product Summary

The BSO615N is a SIPMOS Small-Signal-Transistor made by Infineon Technologies AG. The BSO615N is dual and channel, enhancement mode,Avalanche rated, Logic Level,dv/dt rated. The drain source voltage, Drain-Source on-state resistance, Continuous drain current of BSO615N is 20V, 0.15Ω and 2.6A respectively.

Parametrics

BSO615N maximum ratings: (1) Continuous drain current, one channel active: ID=2.6A; (2) Pulsed drain current, one channel active Ta=25°C: Idpulse=10.4A; (3) Avalanche energy, single pulse Id=2.6 A, Vdd=25 V, Rgs=25Ω; (4)Avalanche current, periodic limited by Tjmax: Iar=2.6A; (5) Avalanche energy, periodic limited by Tjmax: Ear: 0.18mj; (6) Reverse diode dv/dt Is= 2.6 A, dsV=40 V, di/dt = 200 A/μs, Tjmax=150°C; (7) Gate source voltage: Vgs=±20°C; (8) Power dissipation, one channel active T=25°C: Ptot=2W; (9) Operating temperature: Tj=-55 to 150°C; (10) Storage temperature: Tstg=-55 to 150°C; (11) EC climatic category; DIN IEC 68-1: 55/150/56°C.

Features

BSO615N features: (1) Dual N Channel; (2) Enhancement mode; (3) Avalanche rated; (4) Logic Level; (5) dv/dt rated.

Diagrams

BSO615N Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSO615N
BSO615N

MOSFET DUAL N-CH 60V 2.6A 8-SOIC
Data Sheet
Negotiable 
BSO615N G
BSO615N G
Infineon Technologies
MOSFET SIPMOS Sm-Signal TRANSISTOR 60V 2.6A
Data Sheet
0-1: $0.73
1-10: $0.64
10-100: $0.51
100-500: $0.40
BSO615NV
BSO615NV
Infineon Technologies (VA)
MOSFET DUAL N-CH 60V 3.1A 8-SOIC
Data Sheet
Negotiable