PC28F256P30B85

Product Summary

The PC28F256P30B85 is an Intel strataflash embedded memory. The PC28F256P30B85 is the latest generation of Intel StrataFlash memory device. Offered in 64-Mbit up through 1-Gbit densities, the PC28F256P30B85 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and supports for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices. The PC28F256P30B85 is manufactured using Intel 130 nm ETOX VIII process technology.

Parametrics

PC28F256P30B85 absolute maximum ratings: (1)Temperature under bias: -40℃to +85℃; (2)Storage temperature: -65℃ to +125℃; (3)Voltage on any signal (except VCC, VPP): -0.5V to +4.1V; (4)VPP voltage: -0.2V to +10V; (5)VCC voltage: -0.2V to +2.5V; (6)VCCQ voltage: -0.2V to +4.1V; (7)Output short circuit current: 100mA.

Features

PC28F256P30B85 features: (1)High performance, 85/88 ns initial access; 40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode; 25 ns asynchronous-page read mode; 4-, 8-, 16-, and continuous-word burst mode; Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ); 1.8 V buffered programming at 7 μs/byte (Typ); (2)Architecture, Multi-Level Cell Technology: Highest Density; (3)at Lowest Cost; Asymmetrically-blocked architecture; Four 32-KByte parameter blocks: top or bottom configuration; 128-KByte main blocks; (4)Voltage and Power, VCC (core) voltage: 1.7 V – 2.0 V; VCCQ (I/O) voltage: 1.7 V – 3.6 V; Standby current: 55 μA (Typ) for 256-Mbit; 4-Word synchronous read current: 13 mA (Typ) at 40 MHz; (5)Quality and Reliability, operating temperature: -40℃ to +85℃; (6)·1-Gbit in SCSP is -30℃ to +85℃; minimum 100,000 erase cycles per block; ETOX VIII process technology (130 nm); (7)Security, One-Time Programmable Registers; Selectable OTP Space in Main Array; Absolute write protection: VPP = VSS; Absolute write protection: VPP = VSS; Absolute write protection: VPP = VSS; Individual block lock-down; (8)Software, 20μs(Typ) program suspend; 20μs (Typ) erase suspend; Intel Flash Data Integrator optimized; Basic Command Set and Extended Command Set compatible; Common Flash Interface capable; (9)Density and Packaging, 16-bit wide data bus.

Diagrams